Design space exploration of InP Heterojunction Bipolar Transistors (DHBTs)
The goal of this project is to employ TCAD simulations to explore the performance limit of InP-based DHBTs, including their cut-off frequencies, breakdown voltages, vertical and lateral scalabilities, etc.
The Big Picture
Ultrafast semiconductor devices are rich in potential for both scientific and technical applications, because electronic systems operating in low THz frequency range would offer great cost and portability advantages. In collaboration with the experimentalists, a multi-scale simulation environment has been developed to explore the design space of InP-based DHBTs. This multi-scale framework is composed of DFT, tight-binding, hydrodynamic and NEGF theories. Leveraging this simulation scheme, various DHBT systems could be simulated and potential design ameliorations could be proposed.
Type of Work
Theory & TCAD simulation
- Looking for 1 Master student
- Interested candidates please send an application including CV, cover letter and academic transcript to: [email@example.com Xin Wen]
- ETH Contact: Mathieu Luisier
We are seeking a candidate with a strong interest TCAD simulation as well as basic knowledge in solid state physics, quantum mechanics and Matlab programming.