Nano-Device Physics (Prof. A. Schenk)
Research in the Nano-Device Physics Group is concerned with nanoelectronic devices and technologies, first-principle modeling of carrier transport, the advancement of transport solvers both for quantum structures and scattering-dominated devices, and the development of new numerical techniques. For technical and economical reasons modeling and optimization by numerical simulations based on semiconductor physics (Technology Computer Aided Design - TCAD) complete or replace experimental development techniques. The TCAD concept is a scientific challenge as well as a technical methodology, therefore it requires research collaborations between academia and industry. Our TCAD activities comprise the study and modeling of physical phenomena in current and future CMOS technologies as well as in post-CMOS and emerging research devices.
Computational Nanoelectronics (Prof. M. Luisier)
The Computational Nanoelectronics group was established in 2011. It develops and applies numerical algorithms to investigate nanodevices ranging from next generation transistors to thermoelectric generators and optoelectronic devices. While theories based on classical physics have been very successful in helping experimentalists design microelectronic devices, new approaches based on quantum mechanics are required to accurately model today nanoscale transistors and solar cells and to predict their characteristics even before they are fabricated. As simulation tool, we use OMEN, a state-of-the-art, massively parallel, quantum transport solver. OMEN was the first full-band, atomistic, and multi-dimensional device simulator capable of treating realistically extended nanostructures. It has been tested up to 220'000 cores on some of the largest available supercomputers, reaching a sustained performance of more than 1 Petaflop/s, while investigating nanowire, ultra-thin-body, graphene nanoribbon, carbon nanotube field-effect and band-to-band tunneling transistors. By further extending the physical models of OMEN and by applying them to novel structures, we expect to discover new phenomena governing the behavior of nanoelectronic devices and bring new insight into their physics.
Brain-inspired Devices and Circuits (Dr. A. Emboras)
The vision of this group is to develop novel brain-inspired opto-electronic devices and systems in order to enable efficient communication and computation. The group has access in the state-of-the art clean room of the Binning and Rohrer Nanotechnology Center (BRNC) situated on the IBM Zurich campus in Ruschlikon (fabrication), at scopeM (microscopy), and at ETH Zurich in the ETZ building (measurement, characterization).
We are still looking for students/partners to work on the following projects
- Using piezoelectricity in monolayer 2D materials to build future nanoscale devices
- Source contact engineering in 2D materials MOSFET to achieve sub-60 mV/decade transistors
- Electrical characterization and optimization of electrochemical random-access memory for analog computing
- Finite element modeling of electrochemical random access memory
- Influence of the Initial Filament Geometry on the Forming Step in CBRAM.
- Nanoscale Hybrid III-V Plasmonic Laser for Low-Power Photonic ICs
- Design space exploration of InP Heterojunction Bipolar Transistors (DHBTs)
- Quantum transport in 2D heterostructures
- Optical Weights for Photonic Neural Networks
- Ab-initio modeling of ballistic thermal transport
- Development of an efficient algorithm for quantum transport codes
- Investigation of Metal Diffusion in Oxides for CBRAM Applications
- Investigation of Redox Processes in CBRAM
Pages in category "Nano-TCAD"
The following 13 pages are in this category, out of 13 total.