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Difference between revisions of "Design space exploration of InP Heterojunction Bipolar Transistors (DHBTs)"

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[[File:Cryogenic_measurement.png|thumb|A liquid Helium cryostat used to cool electrical devices down to temperatures of 4K]]
 
[[File:Cryogenic_measurement.png|thumb|A liquid Helium cryostat used to cool electrical devices down to temperatures of 4K]]
 
==Short Description==
 
==Short Description==
There is a growing need for electronics operating at cryogenic temperatures, 4 K and below. Applications include space astronomy, physics experiments and not least quantum computers. Electronic circuits and devices, such as amplifiers, are cooled either for latency reasons, by facilitating tight integration with other circuitry, or to reduce the level of noise that they generate. There is thus a need to understand how the behavior and characteristics of such circuits and devices change as they are cooled to cryogenic temperatures. Not only can this help us design efficient electronics by predicting impedances and performance, but we may also find novel ways of using this change in behavior to our advantage.
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The goal of this project is to employ TCAD simulations to explore the performance limit of InP-based DHBTs, including their cut-off frequencies, breakdown voltages, vertical and lateral scalabilities, etc.  
In this master thesis project, the aim is to examine the behavior of electrical devices, transistors and circuits, as they are cooled down to cryogenic temperatures. The project includes the following key elements:
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* Electrical measurements at cryogenic temperature, 4 K and above, of our inhouse transistor technology
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==The Big Picture ==
* Modeling of electrical behavior to understand the unique effects present at these temperatures
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Ultrafast semiconductor devices are rich in potential for both scientific and technical applications, because electronic systems operating in low THz frequency range would offer great cost and portability advantages. In collaboration with the experimentalists, a multi-scale simulation environment has been developed to explore the design space of InP-based DHBTs. This multi-scale framework is composed of DFT, tight-binding, hydrodynamic and NEGF theories. Leveraging this simulation scheme, various DHBT systems could be simulated and potential design ameliorations could be proposed.
* Both DC and high-frequency measurements
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The Materials Integration and Nanoscale Devices (MIND) group has extensive experience in nanoelectronics research as well as cryogenic measurements, providing a strong infrastructure for a successful research project. The project is available immediately for a minimum duration of six months in a collaborative group at the IBM Research Zurich laboratory.
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==Type of Work ==
Please note, this is a non-remunerated M.Sc. thesis project, not a funded position.
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Theory & TCAD simulation
  
 
===Status: Available ===
 
===Status: Available ===
 
: Looking for 1 Master student
 
: Looking for 1 Master student
: Interested candidates please send an application including CV, cover letter and academic transcript to: [mailto:zot@ibm.zurich.com Dr. Cezar Zola]
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: Interested candidates please send an application including CV, cover letter and academic transcript to: [wenx@ethz.ch  Xin Wen]
 
: ETH Contact: [[:User:Mluisier | Mathieu Luisier]]
 
: ETH Contact: [[:User:Mluisier | Mathieu Luisier]]
  
 
===Prerequisites===
 
===Prerequisites===
* Applicants are expected to pursue a master’s degree in engineering or in electrical engineering, physics, nanoscience
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We are seeking a candidate with a strong interest TCAD simulation as well as basic knowledge in solid state physics, quantum mechanics and Matlab programming.
* Must be enrolled as a Master student at ETH Zurich
 
* Experience with simulation or modeling is a plus but not a must
 
* Excellent English communication skills
 
* Be highly motivated, creative and independent
 
 
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===Status: Completed ===
 
===Status: Completed ===

Revision as of 11:44, 3 September 2019

A liquid Helium cryostat used to cool electrical devices down to temperatures of 4K

Short Description

The goal of this project is to employ TCAD simulations to explore the performance limit of InP-based DHBTs, including their cut-off frequencies, breakdown voltages, vertical and lateral scalabilities, etc.

The Big Picture

Ultrafast semiconductor devices are rich in potential for both scientific and technical applications, because electronic systems operating in low THz frequency range would offer great cost and portability advantages. In collaboration with the experimentalists, a multi-scale simulation environment has been developed to explore the design space of InP-based DHBTs. This multi-scale framework is composed of DFT, tight-binding, hydrodynamic and NEGF theories. Leveraging this simulation scheme, various DHBT systems could be simulated and potential design ameliorations could be proposed.

Type of Work

Theory & TCAD simulation

Status: Available

Looking for 1 Master student
Interested candidates please send an application including CV, cover letter and academic transcript to: [wenx@ethz.ch Xin Wen]
ETH Contact: Mathieu Luisier

Prerequisites

We are seeking a candidate with a strong interest TCAD simulation as well as basic knowledge in solid state physics, quantum mechanics and Matlab programming.

Professor

Mathieu Luisier

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