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Design study of tunneling transistors based on a core/shell nanowire structures

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Short Description

Band-to-band tunneling transistors (TFETs) represent a new kind of logic switches that bear a huge potential as active components of next-generation, energy-efficient, integrated circuits. Contrary to standard metal-oxide-semiconductor field-effect transistors (MOSFETs), the sub-threshold slope (SS) of TFETs is not limited to 60 mV/dec at room temperature, but could theoretically be reduced to very low values. TFETs currently face two major challenges:

  1. it is rather difficult to fabricate devices with SS below 60 mV/dec and
  2. their ON-current is usually limited to 10 A/m or less.

The goal of this project is therefore to investigate the characteristics of a new TFET architecture that could provide better performance than standard ones. The key idea consists in using a core/shell nanowire structure where the core and the shell have different doping types and are eventually made of different materials (see adjacent figure). As simulation engine, the commercial TCAD tool S-Device from Synopsys will be used first to analyze the behavior of such TFETs. If possible, verifications with a more advanced simulator developed at IIS should be performed.

Status: Available

Looking for 1 Semester/Master student
Contact: Mathieu Luisier

Prerequisites

Interest in device modeling

Character

20% Theory
80% Simulations

Professor

Mathieu Luisier

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