Information for "Full-band simulations of InP/GaAsSb/InP Double Heterojunction Bipolar Transistors (DHBTs)"
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Basic information
| Display title | Full-band simulations of InP/GaAsSb/InP Double Heterojunction Bipolar Transistors (DHBTs) |
| Default sort key | Full-band simulations of InP/GaAsSb/InP Double Heterojunction Bipolar Transistors (DHBTs) |
| Page length (in bytes) | 2,916 |
| Page ID | 196 |
| Page content language | English (en) |
| Page content model | wikitext |
| Indexing by robots | Allowed |
| Number of redirects to this page | 0 |
| Counted as a content page | Yes |
Page protection
| Edit | Allow all users (infinite) |
| Move | Allow all users (infinite) |
Edit history
| Page creator | Kgf (talk | contribs) |
| Date of page creation | 15:53, 8 March 2014 |
| Latest editor | Emborasa (talk | contribs) |
| Date of latest edit | 15:44, 4 September 2019 |
| Total number of edits | 3 |
| Total number of distinct authors | 2 |
| Recent number of edits (within past 90 days) | 0 |
| Recent number of distinct authors | 0 |
