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Display titleSource contact engineering in 2D materials MOSFET to achieve sub-60 mV/decade transistors
Redirects toElectrothermal characterization of van der Waals Heterostructures with a partial overlap (info)
Default sort keySource contact engineering in 2D materials MOSFET to achieve sub-60 mV/decade transistors
Page length (in bytes)102
Page ID1512
Page content languageEnglish (en)
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Page creatorEmborasa (talk | contribs)
Date of page creation10:56, 23 June 2021
Latest editorEmborasa (talk | contribs)
Date of latest edit10:56, 23 June 2021
Total number of edits1
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