Information for "Source contact engineering in 2D materials MOSFET to achieve sub-60 mV/decade transistors"
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Basic information
Display title | Source contact engineering in 2D materials MOSFET to achieve sub-60 mV/decade transistors |
Redirects to | Electrothermal characterization of van der Waals Heterostructures with a partial overlap (info) |
Default sort key | Source contact engineering in 2D materials MOSFET to achieve sub-60 mV/decade transistors |
Page length (in bytes) | 102 |
Page ID | 1512 |
Page content language | English (en) |
Page content model | wikitext |
Indexing by robots | Allowed |
Number of redirects to this page | 0 |
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Edit history
Page creator | Emborasa (talk | contribs) |
Date of page creation | 10:56, 23 June 2021 |
Latest editor | Emborasa (talk | contribs) |
Date of latest edit | 10:56, 23 June 2021 |
Total number of edits | 1 |
Total number of distinct authors | 1 |
Recent number of edits (within past 90 days) | 0 |
Recent number of distinct authors | 0 |