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Source contact engineering in 2D materials MOSFET to achieve sub-60 mV/decade transistors

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Short Description

The goal of this project is to simulate a novel 2D material transistor with graphene as a source contact. The use of graphene source with carbon nanotube (CNT) channels have been experimentally demonstrated to result in sub-60 mV/dec sub-threshold slope1. In this project, you will first study the graphene-2D material contacts using DFT i.e. analyzing the changes in DOS of 2D materials by using graphene as a source contact. The next step involves simulating the 2D transistors with graphene source contact using the in-house quantum simulator.

The Big Picture

Two-dimensional (2D) materials have attracted sizable attention due to their promise to enable next generation MOSFET at the atomic scale. In theoretical studies, there are a few 2D materials thathave been identified for high performance logic. However, the experimental demonstrations paint a disappointing picture due to the presence of several non-idealities. One such non-ideality being the metal-to-2D material contact resistance, which is shown to severely limit the high performance of 2D material MOSFETs.

Status: Available

Looking for 1 Master student
Interested candidates please contact: Dr.Tarun Agarwal

Prerequisites

We are seeking a candidate with a strong interest in physicsand designof nanoscale MOSFETs.


Type of Work

20% Theory, 80% Simulation & analysis


Professor

Mathieu Luisier

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