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Switched Capacitor Based Bandgap-Reference

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Short Description

Temperature independent references are important building blocks in analog and mixed-signal integrated circuit design. The classical Band Gap-Reference combines the negative VBE temperature coefficient of a bipolar transistor with the voltage drop over a resistor driven by a posititive to absolute temperature (PTAT) current to result in a temperature independent voltage of about 1.2V. Such a voltage is not compliant with modern CMOS processes that have supply voltages below 1V. Engineers have therefore seeked for alternative ways to generate a supply independent voltage around vdd/2 for modern CMOS processes.

One possibility is to use switched capacitor technique to both generate and constant current as well as to build a summing network for the generation of the constant band-gap voltage [1]. Switched capacitor networks have the advantage that they can be made to have linear input/output characteristics that are also proportional to the operating frequency. Their drawback is that they create an intrinsic voltage ripple that has to be heavily suppressed in the case of a reference.

This thesis aims at the design of a switched capacitor based band-gap reference of 600mV in a 130nm CMOS technology with a defined noise budget and the task to minimize the power consumption and to stay within a defined layout area. The thesis offers the possibility to study main aspects of analog and mixed-signal design, such as noise, linearity, matching, small signal-concepts and power consumption and also to do a layout.

Status: Completed

Fall Semester 2015
Alain Takabayashi

Prerequisites

Analog Integrated Circuits (AIC)

Character

20% Theory
50% Design
30% Implementation

Professor

Qiuting Huang

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Detailed Task Description

Goals

Practical Details

Results

Links

  1. A. Shrivastava, et. al., "A 32nW Bandgap Reference Voltage Operational from 0.5V Supply for Ultra-Low Power Systems", ISSCC 2015

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