Difference between revisions of "Category:Physical Characterization"
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===Physical Characterization (Dr. M.Ciappa)=== | ===Physical Characterization (Dr. M.Ciappa)=== | ||
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| + | ====[[Characterization of the susceptibility of power devices to Cosmic Ray]]==== | ||
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| + | Failure mechanisms in power electronic devices that are caused by single event and dose-related effects due to cosmic rays are investigated since long time. In single effect events, ionizing particles impinging on devices undergo different types of electromagnetic and/or nuclear interactions. This results in the deposition of energy along the ionization track that may produce a temporary malfunction in logic components (soft errors), or catastrophic failures in power devices. Since the interaction of cosmic rays with matter is a random process and critical events are quite rare, the simulation, the design, and the operation of robust and reliable devices require an accurate quantitative description of the energy (charge) deposited during each event and under realistic conditions. | ||
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| + | The Integrated Systems Laboratory at the ETH Zurich performs research in the field of physics-based simulation, modelling and reliability for semiconductor processes and devices. | ||
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| + | The Physical Characterization group offers BSc, Semester, and MSc projects in following fields: | ||
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| + | : • Device simulation of the cosmic rays effect in power devices | ||
| + | : • Design and implementation of characterization equipment of power devices | ||
| + | : • Design and implementation of dedicated spectrometer systems | ||
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| + | Special attention is devoted to wide-bandgap devices. | ||
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===Completed Projects=== | ===Completed Projects=== | ||
These are projects that were completed in the last few years | These are projects that were completed in the last few years | ||
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category = Completed | category = Completed | ||
category = Physical Characterization | category = Physical Characterization | ||
| − | category = | + | category = 2019 |
</DynamicPageList> | </DynamicPageList> | ||
| − | === | + | ===2018=== |
<DynamicPageList> | <DynamicPageList> | ||
category = Completed | category = Completed | ||
| − | category = | + | category = Physical Characterization |
| − | category = | + | category = 2018 |
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| − | === | + | ===Contact: === |
| − | + | Dr. Mauro Ciappa [https://ee.ethz.ch/the-department/people-a-z/person-detail.html?persid=30522] | |
| + | Marco Pocaterra [https://ee.ethz.ch/the-department/people-a-z/person-detail.MjUxODIx.TGlzdC8zMjc5LC0xNjUwNTg5ODIw.html] | ||
Latest revision as of 20:33, 14 November 2020
Contents
Physical Characterization (Dr. M.Ciappa)
Characterization of the susceptibility of power devices to Cosmic Ray
Failure mechanisms in power electronic devices that are caused by single event and dose-related effects due to cosmic rays are investigated since long time. In single effect events, ionizing particles impinging on devices undergo different types of electromagnetic and/or nuclear interactions. This results in the deposition of energy along the ionization track that may produce a temporary malfunction in logic components (soft errors), or catastrophic failures in power devices. Since the interaction of cosmic rays with matter is a random process and critical events are quite rare, the simulation, the design, and the operation of robust and reliable devices require an accurate quantitative description of the energy (charge) deposited during each event and under realistic conditions.
The Integrated Systems Laboratory at the ETH Zurich performs research in the field of physics-based simulation, modelling and reliability for semiconductor processes and devices.
The Physical Characterization group offers BSc, Semester, and MSc projects in following fields:
- • Device simulation of the cosmic rays effect in power devices
- • Design and implementation of characterization equipment of power devices
- • Design and implementation of dedicated spectrometer systems
Special attention is devoted to wide-bandgap devices.
Available Projects
We are still looking for students/partners to work on the following projects:
- Characterization of the susceptibility to cosmic radiation of wide bandgap power devices by radioactive sources and at cryogenic temperatures
- Design of an on-field adaptable pulse-processing unit for semicondutor radiation detectors
- Design and Exploitation of a Test-Bench for Non-Destructive Characterization of the Susceptibility of Silicon Carbide (SiC) Power Devices to Cosmic Radiation
- Experimental Validation of Impact Ionization Models for TCAD Simulation by a Novel Characterization Technique
- Design and implementation of the front-end for a portable ionizing radiation detector
Contact:
Dr. Mauro Ciappa [1] Marco Pocaterra [2]
Pages in category "Physical Characterization"
The following 5 pages are in this category, out of 5 total.
C
D
- Design and Exploitation of a Test-Bench for Non-Destructive Characterization of the Susceptibility of Silicon Carbide (SiC) Power Devices to Cosmic Radiation
- Design and implementation of the front-end for a portable ionizing radiation detector
- Design of an on-field adaptable pulse-processing unit for semicondutor radiation detectors
