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Revision history of "Design and Exploitation of a Test-Bench for Non-Destructive Characterization of the Susceptibility of Silicon Carbide (SiC) Power Devices to Cosmic Radiation"

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  • (cur | prev) 16:31, 5 June 2019Pocmarco (talk | contribs). . (3,776 bytes) (+3,776). . (Created page with "thumb| ===Introduction=== Failure mechanisms in power electronic devices that are caused by single event and dose-related effects due to ion...")