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==Short Description==
 
==Short Description==
The goal of this project is to simulate a novel 2D material transistor with graphene as a source contact. The use of graphene source with carbon nanotube (CNT) channels have been experimentally demonstrated to result in sub-60 mV/dec sub-threshold slope1. In this project, you will first study the graphene-2D material contacts using DFT i.e. analyzing the changes in DOS of 2D materials by using graphene as a source contact. The next step involves simulating the 2D transistors with graphene source contact using the in-house quantum simulator.
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The project is aimed to provide the student the basic knowledge of Density Functional Theory (DFT) and Non
 +
Equilibrium Green's Function (NEGF) method. They represent the state-of-art of modelling for numerical
 +
simulations in vibrational, optical, and electronic properties and transport properties of functional devices,
 +
respectively. To obtain accurate results and predict the characteristics of not-yet-fabricated structures, DFT and
 +
NEGF must be combined with each other. The project will focus on the study of electro-thermal properties of
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devices whose active region is a van der Waals material, where two Transition Metal Dichalcogenides
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monolayers are stacked on top of each other only in their central part.
  
 
==The Big Picture==
 
==The Big Picture==
  
Two-dimensional  (2D)  materials  have  attracted  sizable  attention  due  to  their  promise  to  enable  next  generation MOSFET at the atomic scale. In theoretical studies, there are a few 2D materials thathave been identified for high performance logic. However, the experimental demonstrations paint a disappointing picture due to the presence of several non-idealities. One such non-ideality being the metal-to-2D material contact resistance, which is shown to severely limit the high performance of 2D material MOSFETs.
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Integrated electronics constitute one of the most important and spread aspects of our everyday life and among the
 +
years the size shrinking of transistors, the active component of all integrated circuits, has been supported and
 +
encouraged by several aspects. Nevertheless, the indefinitely reduction of dimensions cannot be the only
 +
prospective, but it must be combined with the research of new channel materials and geometries able to replace
 +
Silicon. Due to their ultimate thickness, van der Waals inter-layer coupling, intra-layer covalent bonds and surface
 +
free of dangling bonds, artificial van der Waals materials are expected to exhibit unique features
  
 
===Status: Available ===
 
===Status: Available ===
 
: Looking for 1 Master student
 
: Looking for 1 Master student
: Interested candidates please contact: [mailto:tagarwal@iis.ee.ethz.ch Dr.Tarun Agarwal]
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: Interested candidates please contact: [mailto:safiore@ethz.ch Ms. Sara Fiore]
 
 
 
 
  
  
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===Prerequisites===
 
===Prerequisites===
We are seeking a candidate with a strong interest in physicsand designof nanoscale MOSFETs.
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We are seeking a candidate with a basic knowledge in solid state physics and quantum mechanics. Familiarity
 +
with programming language (e.g. python) as well as ab-initio modelling are appreciated, but not necessary.
  
 
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===Type of Work===
 
===Type of Work===
: 20% Theory, 80% Simulation & analysis
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: 40% Theory, 40% Simulation, 20% Analysis
  
  

Revision as of 10:58, 23 June 2021

Short Description

The project is aimed to provide the student the basic knowledge of Density Functional Theory (DFT) and Non Equilibrium Green's Function (NEGF) method. They represent the state-of-art of modelling for numerical simulations in vibrational, optical, and electronic properties and transport properties of functional devices, respectively. To obtain accurate results and predict the characteristics of not-yet-fabricated structures, DFT and NEGF must be combined with each other. The project will focus on the study of electro-thermal properties of devices whose active region is a van der Waals material, where two Transition Metal Dichalcogenides monolayers are stacked on top of each other only in their central part.

The Big Picture

Integrated electronics constitute one of the most important and spread aspects of our everyday life and among the years the size shrinking of transistors, the active component of all integrated circuits, has been supported and encouraged by several aspects. Nevertheless, the indefinitely reduction of dimensions cannot be the only prospective, but it must be combined with the research of new channel materials and geometries able to replace Silicon. Due to their ultimate thickness, van der Waals inter-layer coupling, intra-layer covalent bonds and surface free of dangling bonds, artificial van der Waals materials are expected to exhibit unique features

Status: Available

Looking for 1 Master student
Interested candidates please contact: Ms. Sara Fiore


Prerequisites

We are seeking a candidate with a basic knowledge in solid state physics and quantum mechanics. Familiarity with programming language (e.g. python) as well as ab-initio modelling are appreciated, but not necessary.


Type of Work

40% Theory, 40% Simulation, 20% Analysis


Professor

Mathieu Luisier

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