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Electrothermal characterization of van der Waals Heterostructures with a partial overlap - Revision history
2024-03-28T22:16:30Z
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Emborasa at 15:06, 16 September 2021
2021-09-16T15:06:29Z
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Emborasa
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Emborasa at 09:58, 23 June 2021
2021-06-23T09:58:22Z
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<tr><td class='diff-marker'> </td><td style="background-color: #f9f9f9; color: #333333; font-size: 88%; border-style: solid; border-width: 1px 1px 1px 4px; border-radius: 0.33em; border-color: #e6e6e6; vertical-align: top; white-space: pre-wrap;"><div>==Short Description==</div></td><td class='diff-marker'> </td><td style="background-color: #f9f9f9; color: #333333; font-size: 88%; border-style: solid; border-width: 1px 1px 1px 4px; border-radius: 0.33em; border-color: #e6e6e6; vertical-align: top; white-space: pre-wrap;"><div>==Short Description==</div></td></tr>
<tr><td class='diff-marker'>−</td><td style="color:black; font-size: 88%; border-style: solid; border-width: 1px 1px 1px 4px; border-radius: 0.33em; border-color: #ffe49c; vertical-align: top; white-space: pre-wrap;"><div>The <del class="diffchange diffchange-inline">goal of this </del>project is to <del class="diffchange diffchange-inline">simulate a novel 2D material transistor with graphene as a source contact. The use </del>of <del class="diffchange diffchange-inline">graphene source with carbon nanotube </del>(<del class="diffchange diffchange-inline">CNT</del>) <del class="diffchange diffchange-inline">channels have been experimentally demonstrated to result </del>in <del class="diffchange diffchange-inline">sub</del>-<del class="diffchange diffchange-inline">60 mV/dec sub</del>-<del class="diffchange diffchange-inline">threshold slope1</del>. <del class="diffchange diffchange-inline">In this </del>project<del class="diffchange diffchange-inline">, you </del>will <del class="diffchange diffchange-inline">first </del>study <del class="diffchange diffchange-inline">the graphene</del>-<del class="diffchange diffchange-inline">2D </del>material <del class="diffchange diffchange-inline">contacts using DFT i.e. analyzing the changes in DOS </del>of <del class="diffchange diffchange-inline">2D materials by using graphene as a source contact. The next step involves simulating the 2D transistors with graphene source contact using the </del>in<del class="diffchange diffchange-inline">-house quantum simulator</del>.</div></td><td class='diff-marker'>+</td><td style="color:black; font-size: 88%; border-style: solid; border-width: 1px 1px 1px 4px; border-radius: 0.33em; border-color: #a3d3ff; vertical-align: top; white-space: pre-wrap;"><div>The project is <ins class="diffchange diffchange-inline">aimed </ins>to <ins class="diffchange diffchange-inline">provide the student the basic knowledge </ins>of <ins class="diffchange diffchange-inline">Density Functional Theory (DFT) and Non </ins></div></td></tr>
<tr><td colspan="2"> </td><td class='diff-marker'>+</td><td style="color:black; font-size: 88%; border-style: solid; border-width: 1px 1px 1px 4px; border-radius: 0.33em; border-color: #a3d3ff; vertical-align: top; white-space: pre-wrap;"><div><ins class="diffchange diffchange-inline">Equilibrium Green's Function </ins>(<ins class="diffchange diffchange-inline">NEGF</ins>) <ins class="diffchange diffchange-inline">method. They represent the state-of-art of modelling for numerical</ins></div></td></tr>
<tr><td colspan="2"> </td><td class='diff-marker'>+</td><td style="color:black; font-size: 88%; border-style: solid; border-width: 1px 1px 1px 4px; border-radius: 0.33em; border-color: #a3d3ff; vertical-align: top; white-space: pre-wrap;"><div><ins class="diffchange diffchange-inline">simulations </ins>in <ins class="diffchange diffchange-inline">vibrational, optical, and electronic properties and transport properties of functional devices, </ins></div></td></tr>
<tr><td colspan="2"> </td><td class='diff-marker'>+</td><td style="color:black; font-size: 88%; border-style: solid; border-width: 1px 1px 1px 4px; border-radius: 0.33em; border-color: #a3d3ff; vertical-align: top; white-space: pre-wrap;"><div><ins class="diffchange diffchange-inline">respectively. To obtain accurate results and predict the characteristics of not</ins>-<ins class="diffchange diffchange-inline">yet</ins>-<ins class="diffchange diffchange-inline">fabricated structures, DFT and </ins></div></td></tr>
<tr><td colspan="2"> </td><td class='diff-marker'>+</td><td style="color:black; font-size: 88%; border-style: solid; border-width: 1px 1px 1px 4px; border-radius: 0.33em; border-color: #a3d3ff; vertical-align: top; white-space: pre-wrap;"><div><ins class="diffchange diffchange-inline">NEGF must be combined with each other</ins>. <ins class="diffchange diffchange-inline">The </ins>project will <ins class="diffchange diffchange-inline">focus on the </ins>study <ins class="diffchange diffchange-inline">of electro</ins>-<ins class="diffchange diffchange-inline">thermal properties of </ins></div></td></tr>
<tr><td colspan="2"> </td><td class='diff-marker'>+</td><td style="color:black; font-size: 88%; border-style: solid; border-width: 1px 1px 1px 4px; border-radius: 0.33em; border-color: #a3d3ff; vertical-align: top; white-space: pre-wrap;"><div><ins class="diffchange diffchange-inline">devices whose active region is a van der Waals </ins>material<ins class="diffchange diffchange-inline">, where two Transition Metal Dichalcogenides </ins></div></td></tr>
<tr><td colspan="2"> </td><td class='diff-marker'>+</td><td style="color:black; font-size: 88%; border-style: solid; border-width: 1px 1px 1px 4px; border-radius: 0.33em; border-color: #a3d3ff; vertical-align: top; white-space: pre-wrap;"><div><ins class="diffchange diffchange-inline">monolayers are stacked on top </ins>of <ins class="diffchange diffchange-inline">each other only </ins>in <ins class="diffchange diffchange-inline">their central part</ins>.</div></td></tr>
<tr><td class='diff-marker'> </td><td style="background-color: #f9f9f9; color: #333333; font-size: 88%; border-style: solid; border-width: 1px 1px 1px 4px; border-radius: 0.33em; border-color: #e6e6e6; vertical-align: top; white-space: pre-wrap;"></td><td class='diff-marker'> </td><td style="background-color: #f9f9f9; color: #333333; font-size: 88%; border-style: solid; border-width: 1px 1px 1px 4px; border-radius: 0.33em; border-color: #e6e6e6; vertical-align: top; white-space: pre-wrap;"></td></tr>
<tr><td class='diff-marker'> </td><td style="background-color: #f9f9f9; color: #333333; font-size: 88%; border-style: solid; border-width: 1px 1px 1px 4px; border-radius: 0.33em; border-color: #e6e6e6; vertical-align: top; white-space: pre-wrap;"><div>==The Big Picture==</div></td><td class='diff-marker'> </td><td style="background-color: #f9f9f9; color: #333333; font-size: 88%; border-style: solid; border-width: 1px 1px 1px 4px; border-radius: 0.33em; border-color: #e6e6e6; vertical-align: top; white-space: pre-wrap;"><div>==The Big Picture==</div></td></tr>
<tr><td class='diff-marker'> </td><td style="background-color: #f9f9f9; color: #333333; font-size: 88%; border-style: solid; border-width: 1px 1px 1px 4px; border-radius: 0.33em; border-color: #e6e6e6; vertical-align: top; white-space: pre-wrap;"></td><td class='diff-marker'> </td><td style="background-color: #f9f9f9; color: #333333; font-size: 88%; border-style: solid; border-width: 1px 1px 1px 4px; border-radius: 0.33em; border-color: #e6e6e6; vertical-align: top; white-space: pre-wrap;"></td></tr>
<tr><td class='diff-marker'>−</td><td style="color:black; font-size: 88%; border-style: solid; border-width: 1px 1px 1px 4px; border-radius: 0.33em; border-color: #ffe49c; vertical-align: top; white-space: pre-wrap;"><div><del class="diffchange diffchange-inline">Two-dimensional  (2D)  materials  have  attracted  sizable  attention  due  to  their  promise  to  enable  next  generation MOSFET at </del>the <del class="diffchange diffchange-inline">atomic scale. In theoretical studies</del>, <del class="diffchange diffchange-inline">there are a few 2D materials thathave </del>been <del class="diffchange diffchange-inline">identified for high performance logic</del>. <del class="diffchange diffchange-inline">However</del>, the <del class="diffchange diffchange-inline">experimental demonstrations paint a disappointing picture due to </del>the <del class="diffchange diffchange-inline">presence </del>of <del class="diffchange diffchange-inline">several non-idealities</del>. <del class="diffchange diffchange-inline">One such non</del>-<del class="diffchange diffchange-inline">ideality being the metal</del>-<del class="diffchange diffchange-inline">to-2D material contact resistance</del>, <del class="diffchange diffchange-inline">which is shown </del>to <del class="diffchange diffchange-inline">severely limit the high performance of 2D material MOSFETs.</del></div></td><td class='diff-marker'>+</td><td style="color:black; font-size: 88%; border-style: solid; border-width: 1px 1px 1px 4px; border-radius: 0.33em; border-color: #a3d3ff; vertical-align: top; white-space: pre-wrap;"><div><ins class="diffchange diffchange-inline">Integrated electronics constitute one of the most important and spread aspects of our everyday life and among the </ins></div></td></tr>
<tr><td colspan="2"> </td><td class='diff-marker'>+</td><td style="color:black; font-size: 88%; border-style: solid; border-width: 1px 1px 1px 4px; border-radius: 0.33em; border-color: #a3d3ff; vertical-align: top; white-space: pre-wrap;"><div><ins class="diffchange diffchange-inline">years the size shrinking of transistors, </ins>the <ins class="diffchange diffchange-inline">active component of all integrated circuits</ins>, <ins class="diffchange diffchange-inline">has </ins>been <ins class="diffchange diffchange-inline">supported and </ins></div></td></tr>
<tr><td colspan="2"> </td><td class='diff-marker'>+</td><td style="color:black; font-size: 88%; border-style: solid; border-width: 1px 1px 1px 4px; border-radius: 0.33em; border-color: #a3d3ff; vertical-align: top; white-space: pre-wrap;"><div><ins class="diffchange diffchange-inline">encouraged by several aspects</ins>. <ins class="diffchange diffchange-inline">Nevertheless</ins>, the <ins class="diffchange diffchange-inline">indefinitely reduction of dimensions cannot be the only </ins></div></td></tr>
<tr><td colspan="2"> </td><td class='diff-marker'>+</td><td style="color:black; font-size: 88%; border-style: solid; border-width: 1px 1px 1px 4px; border-radius: 0.33em; border-color: #a3d3ff; vertical-align: top; white-space: pre-wrap;"><div><ins class="diffchange diffchange-inline">prospective, but it must be combined with </ins>the <ins class="diffchange diffchange-inline">research </ins>of <ins class="diffchange diffchange-inline">new channel materials and geometries able to replace </ins></div></td></tr>
<tr><td colspan="2"> </td><td class='diff-marker'>+</td><td style="color:black; font-size: 88%; border-style: solid; border-width: 1px 1px 1px 4px; border-radius: 0.33em; border-color: #a3d3ff; vertical-align: top; white-space: pre-wrap;"><div><ins class="diffchange diffchange-inline">Silicon</ins>. <ins class="diffchange diffchange-inline">Due to their ultimate thickness, van der Waals inter</ins>-<ins class="diffchange diffchange-inline">layer coupling, intra</ins>-<ins class="diffchange diffchange-inline">layer covalent bonds and surface </ins></div></td></tr>
<tr><td colspan="2"> </td><td class='diff-marker'>+</td><td style="color:black; font-size: 88%; border-style: solid; border-width: 1px 1px 1px 4px; border-radius: 0.33em; border-color: #a3d3ff; vertical-align: top; white-space: pre-wrap;"><div><ins class="diffchange diffchange-inline">free of dangling bonds</ins>, <ins class="diffchange diffchange-inline">artificial van der Waals materials are expected </ins>to <ins class="diffchange diffchange-inline">exhibit unique features</ins></div></td></tr>
<tr><td class='diff-marker'> </td><td style="background-color: #f9f9f9; color: #333333; font-size: 88%; border-style: solid; border-width: 1px 1px 1px 4px; border-radius: 0.33em; border-color: #e6e6e6; vertical-align: top; white-space: pre-wrap;"></td><td class='diff-marker'> </td><td style="background-color: #f9f9f9; color: #333333; font-size: 88%; border-style: solid; border-width: 1px 1px 1px 4px; border-radius: 0.33em; border-color: #e6e6e6; vertical-align: top; white-space: pre-wrap;"></td></tr>
<tr><td class='diff-marker'> </td><td style="background-color: #f9f9f9; color: #333333; font-size: 88%; border-style: solid; border-width: 1px 1px 1px 4px; border-radius: 0.33em; border-color: #e6e6e6; vertical-align: top; white-space: pre-wrap;"><div>===Status: Available ===</div></td><td class='diff-marker'> </td><td style="background-color: #f9f9f9; color: #333333; font-size: 88%; border-style: solid; border-width: 1px 1px 1px 4px; border-radius: 0.33em; border-color: #e6e6e6; vertical-align: top; white-space: pre-wrap;"><div>===Status: Available ===</div></td></tr>
<tr><td class='diff-marker'> </td><td style="background-color: #f9f9f9; color: #333333; font-size: 88%; border-style: solid; border-width: 1px 1px 1px 4px; border-radius: 0.33em; border-color: #e6e6e6; vertical-align: top; white-space: pre-wrap;"><div>: Looking for 1 Master student</div></td><td class='diff-marker'> </td><td style="background-color: #f9f9f9; color: #333333; font-size: 88%; border-style: solid; border-width: 1px 1px 1px 4px; border-radius: 0.33em; border-color: #e6e6e6; vertical-align: top; white-space: pre-wrap;"><div>: Looking for 1 Master student</div></td></tr>
<tr><td class='diff-marker'>−</td><td style="color:black; font-size: 88%; border-style: solid; border-width: 1px 1px 1px 4px; border-radius: 0.33em; border-color: #ffe49c; vertical-align: top; white-space: pre-wrap;"><div>: Interested candidates please contact: [mailto:<del class="diffchange diffchange-inline">tagarwal</del>@<del class="diffchange diffchange-inline">iis.ee.</del>ethz.ch <del class="diffchange diffchange-inline">Dr</del>.<del class="diffchange diffchange-inline">Tarun Agarwal</del>]</div></td><td class='diff-marker'>+</td><td style="color:black; font-size: 88%; border-style: solid; border-width: 1px 1px 1px 4px; border-radius: 0.33em; border-color: #a3d3ff; vertical-align: top; white-space: pre-wrap;"><div>: Interested candidates please contact: [mailto:<ins class="diffchange diffchange-inline">safiore</ins>@ethz.ch <ins class="diffchange diffchange-inline"> Ms</ins>. <ins class="diffchange diffchange-inline">Sara Fiore</ins>]</div></td></tr>
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<tr><td class='diff-marker'> </td><td style="background-color: #f9f9f9; color: #333333; font-size: 88%; border-style: solid; border-width: 1px 1px 1px 4px; border-radius: 0.33em; border-color: #e6e6e6; vertical-align: top; white-space: pre-wrap;"><div>===Prerequisites===</div></td><td class='diff-marker'> </td><td style="background-color: #f9f9f9; color: #333333; font-size: 88%; border-style: solid; border-width: 1px 1px 1px 4px; border-radius: 0.33em; border-color: #e6e6e6; vertical-align: top; white-space: pre-wrap;"><div>===Prerequisites===</div></td></tr>
<tr><td class='diff-marker'>−</td><td style="color:black; font-size: 88%; border-style: solid; border-width: 1px 1px 1px 4px; border-radius: 0.33em; border-color: #ffe49c; vertical-align: top; white-space: pre-wrap;"><div>We are seeking a candidate with a <del class="diffchange diffchange-inline">strong interest </del>in <del class="diffchange diffchange-inline">physicsand designof nanoscale MOSFETs</del>.</div></td><td class='diff-marker'>+</td><td style="color:black; font-size: 88%; border-style: solid; border-width: 1px 1px 1px 4px; border-radius: 0.33em; border-color: #a3d3ff; vertical-align: top; white-space: pre-wrap;"><div>We are seeking a candidate with a <ins class="diffchange diffchange-inline">basic knowledge </ins>in <ins class="diffchange diffchange-inline">solid state physics and quantum mechanics. Familiarity </ins></div></td></tr>
<tr><td colspan="2"> </td><td class='diff-marker'>+</td><td style="color:black; font-size: 88%; border-style: solid; border-width: 1px 1px 1px 4px; border-radius: 0.33em; border-color: #a3d3ff; vertical-align: top; white-space: pre-wrap;"><div><ins class="diffchange diffchange-inline">with programming language (e.g. python) as well as ab-initio modelling are appreciated, but not necessary</ins>.</div></td></tr>
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<tr><td class='diff-marker'> </td><td style="background-color: #f9f9f9; color: #333333; font-size: 88%; border-style: solid; border-width: 1px 1px 1px 4px; border-radius: 0.33em; border-color: #e6e6e6; vertical-align: top; white-space: pre-wrap;"><div>===Type of Work===</div></td><td class='diff-marker'> </td><td style="background-color: #f9f9f9; color: #333333; font-size: 88%; border-style: solid; border-width: 1px 1px 1px 4px; border-radius: 0.33em; border-color: #e6e6e6; vertical-align: top; white-space: pre-wrap;"><div>===Type of Work===</div></td></tr>
<tr><td class='diff-marker'>−</td><td style="color:black; font-size: 88%; border-style: solid; border-width: 1px 1px 1px 4px; border-radius: 0.33em; border-color: #ffe49c; vertical-align: top; white-space: pre-wrap;"><div>: <del class="diffchange diffchange-inline">20</del>% Theory, <del class="diffchange diffchange-inline">80</del>% Simulation <del class="diffchange diffchange-inline">& analysis</del></div></td><td class='diff-marker'>+</td><td style="color:black; font-size: 88%; border-style: solid; border-width: 1px 1px 1px 4px; border-radius: 0.33em; border-color: #a3d3ff; vertical-align: top; white-space: pre-wrap;"><div>: <ins class="diffchange diffchange-inline">40</ins>% Theory, <ins class="diffchange diffchange-inline">40</ins>% Simulation<ins class="diffchange diffchange-inline">, 20% Analysis</ins></div></td></tr>
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Emborasa
http://iis-projects.ee.ethz.ch/index.php?title=Electrothermal_characterization_of_van_der_Waals_Heterostructures_with_a_partial_overlap&diff=6636&oldid=prev
Emborasa: Emborasa moved page Source contact engineering in 2D materials MOSFET to achieve sub-60 mV/decade transistors to Electrothermal characterization of van der Waals Heterostructures with a partial overlap
2021-06-23T09:56:19Z
<p>Emborasa moved page <a href="/index.php?title=Source_contact_engineering_in_2D_materials_MOSFET_to_achieve_sub-60_mV/decade_transistors" class="mw-redirect" title="Source contact engineering in 2D materials MOSFET to achieve sub-60 mV/decade transistors">Source contact engineering in 2D materials MOSFET to achieve sub-60 mV/decade transistors</a> to <a href="/index.php?title=Electrothermal_characterization_of_van_der_Waals_Heterostructures_with_a_partial_overlap" title="Electrothermal characterization of van der Waals Heterostructures with a partial overlap">Electrothermal characterization of van der Waals Heterostructures with a partial overlap</a></p>
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<td colspan='1' style="background-color: white; color:black; text-align: center;">Revision as of 09:56, 23 June 2021</td>
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Emborasa
http://iis-projects.ee.ethz.ch/index.php?title=Electrothermal_characterization_of_van_der_Waals_Heterostructures_with_a_partial_overlap&diff=4833&oldid=prev
Emborasa at 10:52, 4 September 2019
2019-09-04T10:52:06Z
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Emborasa
http://iis-projects.ee.ethz.ch/index.php?title=Electrothermal_characterization_of_van_der_Waals_Heterostructures_with_a_partial_overlap&diff=4828&oldid=prev
Emborasa: Created page with "==Short Description== The goal of this project is to simulate a novel 2D material transistor with graphene as a source contact. The use of graphene source with carbon nanotube..."
2019-09-03T17:22:58Z
<p>Created page with "==Short Description== The goal of this project is to simulate a novel 2D material transistor with graphene as a source contact. The use of graphene source with carbon nanotube..."</p>
<p><b>New page</b></p><div>==Short Description==<br />
The goal of this project is to simulate a novel 2D material transistor with graphene as a source contact. The use of graphene source with carbon nanotube (CNT) channels have been experimentally demonstrated to result in sub-60 mV/dec sub-threshold slope1. In this project, you will first study the graphene-2D material contacts using DFT i.e. analyzing the changes in DOS of 2D materials by using graphene as a source contact. The next step involves simulating the 2D transistors with graphene source contact using the in-house quantum simulator.<br />
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==The Big Picture==<br />
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Two-dimensional (2D) materials have attracted sizable attention due to their promise to enable next generation MOSFET at the atomic scale. In theoretical studies, there are a few 2D materials thathave been identified for high performance logic. However, the experimental demonstrations paint a disappointing picture due to the presence of several non-idealities. One such non-ideality being the metal-to-2D material contact resistance, which is shown to severely limit the high performance of 2D material MOSFETs.<br />
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===Status: Available ===<br />
: Looking for 1 Master student<br />
: Interested candidates please contact: [mailto:tagarwal@iis.ee.ethz.ch Dr.Tarun Agarwal]<br />
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[[Category:Nano-TCAD]]<br />
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===Prerequisites===<br />
We are seeking a candidate with a strong interest in physicsand designof nanoscale MOSFETs.<br />
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: Fall Semester 2014 (sem13h2)<br />
: Matthias Baer, Renzo Andri<br />
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<!-- : [http://www.iis.ee.ethz.ch/people/person-detail.html?persid=194234 Luca Benini] ---><br />
<!-- : [http://www.iis.ee.ethz.ch/people/person-detail.html?persid=78758 Qiuting Huang] ---><br />
: [http://www.iis.ee.ethz.ch/people/person-detail.html?persid=80923 Mathieu Luisier]<br />
<!-- :[http://www.iis.ee.ethz.ch/people/person-detail.MjUwODc0.TGlzdC8xOTgzLDIxMjc1NTkyODc=.html Taekwang Jang] ---><br />
<!-- : [http://www.iis.ee.ethz.ch/people/person-detail.html?persid=79172 Andreas Schenk] ---><br />
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Emborasa