Personal tools

Difference between revisions of "Implementation of Computationally Efficient Scattering Mechanisms for Periodic Devices and 2D Materials"

From iis-projects

Jump to: navigation, search
 
(8 intermediate revisions by the same user not shown)
Line 1: Line 1:
 
==Short Description==
 
==Short Description==
this project,  the  goal  is to build  useful  nanoscale  devices  using  the intrinsic  piezoelectricity  of 2D  materials. Starting  from  density-functional-theory  (DFT)  to  calculate  the elastic  stiffness  tensors  and  employing  them  to calculate the electric field induced strain in 2D materials. The next step would be quantify the effect of this strain on the electronic properties of 2D materials, and hence the electrostatic control and transport in 2D material transistors using the in-house quantum simulator. This should also enable you to think of other useful nanoscale devices.
+
The goal of this thesis is to extend the functionality of a state of the art industrial quantum transport solver based
 +
on the effective mass approximation to include scattering mechanisms for 2D materials and generally devices that
 +
are periodic in at least one of the three spacial dimensions.
  
 
==The Big Picture==
 
==The Big Picture==
  
The piezoelectric materials, which can convert mechanical energy to electrical energy and vice-versa, have found multiple applications in sensors, actuators, and harvesting energy from the environment. The most popular material being  lead  zirconate  titanate  (PZT). Recently, monolayer  two-dimensional  (2D)  materials  have  been  both theoretically predicted and experimentally demonstrated to be piezoelectric unlike their bulk counterpart due to the absence of centro-symmetry1. However, the use of this piezoelectricity in building nanoscale devices is still lacking.Hence, in this project, you will have scope of proposing novel devices using the intrinsic piezoelectricity in monolayer 2D materials.
+
2D materials have seen a surge of interest in recent years for their advantageous electronic properties. For
 +
industrial applications, devices need to be able to be simulated quickly and accurately. Full-band and/or Density
 +
Functional Theory (DFT) models are usually too computationally demanding. A similar case can be made for
 +
FinFETs, which are 3D components that can be approximated as 2D slices, where the high dimension can be
 +
treated as periodic
  
 
===Status: Available ===
 
===Status: Available ===
: Looking for 1 Master student
+
: Looking for 1 Master/semester student
: Interested candidates please contact: [mailto:tagarwal@iis.ee.ethz.ch Dr.Tarun Agarwal]
+
: Interested candidates please contact: [mailto:dleonard@iis.ee.ethz.ch Leonard Deuschle]  
 +
 
  
  
Line 14: Line 21:
 
[[Category:Available]]
 
[[Category:Available]]
 
[[Category:Master Thesis]]
 
[[Category:Master Thesis]]
 
+
[[Category:Hot]]
  
 
===Prerequisites===
 
===Prerequisites===
We are seeking a candidate with a strong interest in physics of nanoscale devices and advanced models to design the novel devices.
+
We are seeking a candidate with a strong interest in implementation of physical models and some background in
 +
semiconductor devices. Basic knowledge of semiconductor quantum transport formalism (NEGF) will be helpful
 +
but not required. Knowledge of C++ parallelization libraries such as MPI and CUDA as well as a basic grasp on
 +
High Performance Computing is advantageous but not necessary.
  
 
<!--  
 
<!--  
Line 29: Line 39:
 
: Supervision: [[:User:Mluisier | Mathieu Luisier]]
 
: Supervision: [[:User:Mluisier | Mathieu Luisier]]
 
--->
 
--->
 
  
 
===Type of Work===
 
===Type of Work===
: 20% Theory, 40% Simulation & 40% analysis
+
: Theory and mathematical formulation: 30%
 
+
: Modeling with MATLAB/Python: 25%
 +
: Parallelization and Integration in C++: 45%
  
 
===Professor===
 
===Professor===

Latest revision as of 16:06, 16 September 2021

Short Description

The goal of this thesis is to extend the functionality of a state of the art industrial quantum transport solver based on the effective mass approximation to include scattering mechanisms for 2D materials and generally devices that are periodic in at least one of the three spacial dimensions.

The Big Picture

2D materials have seen a surge of interest in recent years for their advantageous electronic properties. For industrial applications, devices need to be able to be simulated quickly and accurately. Full-band and/or Density Functional Theory (DFT) models are usually too computationally demanding. A similar case can be made for FinFETs, which are 3D components that can be approximated as 2D slices, where the high dimension can be treated as periodic

Status: Available

Looking for 1 Master/semester student
Interested candidates please contact: Leonard Deuschle

Prerequisites

We are seeking a candidate with a strong interest in implementation of physical models and some background in semiconductor devices. Basic knowledge of semiconductor quantum transport formalism (NEGF) will be helpful but not required. Knowledge of C++ parallelization libraries such as MPI and CUDA as well as a basic grasp on High Performance Computing is advantageous but not necessary.


Type of Work

Theory and mathematical formulation: 30%
Modeling with MATLAB/Python: 25%
Parallelization and Integration in C++: 45%

Professor

Mathieu Luisier

↑ top