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LTE-Advanced RF Front-end Design in 28nm CMOS Technology

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File:LTE FE over.pdf

Short Description

In a transceiver IC, the analog front-end is the first circuit that processes the received signal from the antenna. In modern transceiver ICs (e.g. for LTE application) the frontend amplifies the signal prior to a direct downconversion to baseband. Both the amplification and frequency conversion stage have to show a very low noise figure and have to be free of harmonic distortion. As more and more digital functions are integrated on the transceiver IC, ultra-scaled digital CMOS starts offering big advantages in terms of area and power consumption. Those technologies pose new challenges and offer new opportunities to the analog front-end design. In this work the analog front-end for the LTE-Advanced standard shall be implemented in a 28nm digital CMOS technology. Different topologies for the low-noise-amplifier (LNA) and the mixer (frequency translation circuit) shall be analyzed and compared. The most promising will be implemented and verifed in the mentioned IC technology.

Status: Available

Looking for 1-2 Semester/Master students
Contact: Benjamin Sporrer


Analog Integrated Circuits
Communication Electronics (recommended)


30% Theory
60% ASIC Design
40% EDA tools


Qiuting Huang

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Detailed Task Description


Practical Details



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