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Difference between revisions of "Quantum transport in 2D heterostructures"

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==Short Description==
 
==Short Description==
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Mono-atomic layer, so-called two-dimensional (2D), materials with a tunnelable band gap, e.g. phosphorene, are becoming very promising for potentially device applications. Tunnel field-effect transistors (TFETs) are expected to give rise to a new generation of low-power consumption logic switches. To date, TFETs are being investigated and built from conventional semiconductors, less often from 2D materials. Your task is to theoretical characterize/study hetero-bilayer TFETs. 2D materials can be defined starting the project according to the student interest.
  
 
===Status: Available ===
 
===Status: Available ===

Revision as of 14:41, 7 July 2016

Short Description

Mono-atomic layer, so-called two-dimensional (2D), materials with a tunnelable band gap, e.g. phosphorene, are becoming very promising for potentially device applications. Tunnel field-effect transistors (TFETs) are expected to give rise to a new generation of low-power consumption logic switches. To date, TFETs are being investigated and built from conventional semiconductors, less often from 2D materials. Your task is to theoretical characterize/study hetero-bilayer TFETs. 2D materials can be defined starting the project according to the student interest.

Status: Available

Looking for 1 Master student in Electrical Engineering, Physics, Computer Science or related fields
Contact: Hamilton Carrillo-Nunez

Prerequisites

Experience with Ab-initio tools (VASP, QUANTUMESPRESSO), but not required

Character

40% Theory
40% Simulations
20% Implementation

Professor

Mathieu Luisier


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Detailed Task Description

Goals

Practical Details