Difference between revisions of "Quantum transport in 2D heterostructures"
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: [http://www.nano-tcad.ethz.ch/en/general-information/people/professors/uid/1021.html Andreas Schenk] | : [http://www.nano-tcad.ethz.ch/en/general-information/people/professors/uid/1021.html Andreas Schenk] | ||
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==Detailed Task Description== | ==Detailed Task Description== | ||
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===Practical Details=== | ===Practical Details=== | ||
* '''[[Project Plan]]''' | * '''[[Project Plan]]''' | ||
Revision as of 15:56, 7 July 2016
Short Description
Mono-atomic layer, so-called two-dimensional (2D), materials with a tunnelable band gap, e.g. phosphorene, are becoming very promising for potentially device applications. Tunnel field-effect transistors (TFETs) are expected to give rise to a new generation of low-power consumption logic switches. To date, TFETs are being investigated and built from conventional semiconductors, less often from 2D materials. Your task is from first-principles to characterize/study 2D-material-based TFETs, e.g. hetero-bilayer TFETs. The 2D Materials can be defined starting the project according to the student interest.
Status: Available
- Looking for 1 Master student in Electrical Engineering, Physics, Computer Science or related fields
- Contact: Hamilton Carrillo-Nunez
Prerequisites
- Experience with Ab-initio tools (VASP, QUANTUMESPRESSO), but not required
Character
- 40% Theory
- 40% Simulations
- 20% Implementation
Professor
