Quantum transport in 2D heterostructures
From iis-projects
Contents
Short Description
The goal of the project is to develop methods and try new materials when modeling 2D heterostructures forquantum transport simulations, specifically focusing on how we can efficiently use DFT tools to simulate van derWaals heterostructures and semiconductor-oxide interfaces. By the end you should be able to model a materialinterface and characterize it using quantum transport. Single-layer 2-D materials and van der Waals heterostructures made of transition metal dichalcogenides such asMoS2 has proven to be viable candidates for future generations of transistor devices, enabling device scaling tonew extremes. However, the huge number of possible material combinations to explore makes computationalmodeling necessary. We therefore aim to develop new efficient methods to explore these materials.
The work will manly consist of understanding and performing DFT calculations using tools such as QuantumEspresso and VASP, but also writing code to prepare and process simulations. The generated material systemswill be analyzed using quantum transport tools. To do all this, you have access to our group's impressivecomputational cluster. We are seeking a candidate with a strong interest in device physics and physical simulations. Basic programmingskills, for example in Python or MATLAB, are required together with a fundamental knowledge of quantum andsemiconductor physics. Experience with DFT simulations and quantum transport are advantageous
Status: Available
- Looking for 1 semester student
- Contact: Jonathan Backman jbackman@iis.ee.ethz.ch
Prerequisites
- Experience with Ab-initio tools (VASP, QUANTUMESPRESSO), but not required
Character
- 40% Theory
- 40% Simulations
- 20% Implementation
