Information for "Cryogenic measurements and modeling of electrical devices"
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Basic information
| Display title | Cryogenic measurements and modeling of electrical devices |
| Redirects to | Design space exploration of InP Heterojunction Bipolar Transistors (DHBTs) (info) |
| Default sort key | Cryogenic measurements and modeling of electrical devices |
| Page length (in bytes) | 88 |
| Page ID | 1142 |
| Page content language | English (en) |
| Page content model | wikitext |
| Indexing by robots | Allowed |
| Number of redirects to this page | 0 |
Page protection
| Edit | Allow all users (infinite) |
| Move | Allow all users (infinite) |
Edit history
| Page creator | Emborasa (talk | contribs) |
| Date of page creation | 12:41, 3 September 2019 |
| Latest editor | Emborasa (talk | contribs) |
| Date of latest edit | 12:41, 3 September 2019 |
| Total number of edits | 1 |
| Total number of distinct authors | 1 |
| Recent number of edits (within past 90 days) | 0 |
| Recent number of distinct authors | 0 |
