Difference between revisions of "Influence of the Initial Filament Geometry on the Forming Step in CBRAM"
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==Short Description== | ==Short Description== | ||
| − | + | Conductive bridging RAM (CBRAM)is operated via the formation and disruption of a metallic filament between two metal electrodes. The presence or absence of such a bridging filament results in a low (ON) or high (OFF) resistance state, respectively. The filament formation/disruption is controlled by applying an external voltage. In this project, you will focus on the so-called forming step, the initial formation of a metallic filament in an “unused” device. Starting from different electrodes with pre-definedfilament geometries (e.g. cone-shaped, see figure), you will evaluate their influence on the switching dynamics. The simulations will be performed by LAMMPS, a molecular dynamics simulator using force fields, and the resulting trajectories will be analyzed by your own Matlab scripts. | |
| + | ==The Big Picture== | ||
| + | Well-established memory technologies such as Flash and dynamic RAM (DRAM) have nearly reached their scaling limits in integrationdensity while being limited in operating speed. Furthermore, more energy-efficient memory storage options could reduce itsoperating costs. CBRAMis a promising candidate that could address these issues.Unfortunately, the filament formation and dissolution mechanism remainspoorly known.However, a more detailed understanding of these processes is essentialto increase the filament stability and the reliabilityof CBRAM as a device.Thus, investigations on an atomic level by the usage ofcomputer-aided design (TCAD) toolsarerequired. | ||
===Status: Available === | ===Status: Available === | ||
| − | : Looking for 1 | + | : Looking for 1 semester student |
| − | : | + | : Interested candidates please contact: [mailto:aejan@iis.ee.ethz.ch Jan Aeschlimann] |
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[[Category:Nano-TCAD]] | [[Category:Nano-TCAD]] | ||
[[Category:Available]] | [[Category:Available]] | ||
| − | [[Category: | + | [[Category:Master Thesis]] |
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[[Category:Hot]] | [[Category:Hot]] | ||
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| + | ===Prerequisites=== | ||
| + | We are seeking for a candidate with a general interest in molecular modelling techniques(no former experience required). Basic knowledge in MATLABis advantageous. | ||
| − | + | ===Character=== | |
| − | + | 20% theory, 10% model development, 70% simulation and analysis. | |
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| − | + | ===Professor=== | |
| − | [ | + | <!-- : [http://www.iis.ee.ethz.ch/people/person-detail.html?persid=194234 Luca Benini] ---> |
| − | [ | + | <!-- : [http://www.iis.ee.ethz.ch/people/person-detail.html?persid=78758 Qiuting Huang] ---> |
| − | [ | + | : [http://www.iis.ee.ethz.ch/people/person-detail.html?persid=80923 Mathieu Luisier] |
| − | [ | + | <!-- :[http://www.iis.ee.ethz.ch/people/person-detail.MjUwODc0.TGlzdC8xOTgzLDIxMjc1NTkyODc=.html Taekwang Jang] ---> |
| − | [ | + | <!-- : [http://www.iis.ee.ethz.ch/people/person-detail.html?persid=79172 Andreas Schenk] ---> |
| − | + | [[#top|↑ top]] | |
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Latest revision as of 15:34, 4 September 2019
Contents
Short Description
Conductive bridging RAM (CBRAM)is operated via the formation and disruption of a metallic filament between two metal electrodes. The presence or absence of such a bridging filament results in a low (ON) or high (OFF) resistance state, respectively. The filament formation/disruption is controlled by applying an external voltage. In this project, you will focus on the so-called forming step, the initial formation of a metallic filament in an “unused” device. Starting from different electrodes with pre-definedfilament geometries (e.g. cone-shaped, see figure), you will evaluate their influence on the switching dynamics. The simulations will be performed by LAMMPS, a molecular dynamics simulator using force fields, and the resulting trajectories will be analyzed by your own Matlab scripts.
The Big Picture
Well-established memory technologies such as Flash and dynamic RAM (DRAM) have nearly reached their scaling limits in integrationdensity while being limited in operating speed. Furthermore, more energy-efficient memory storage options could reduce itsoperating costs. CBRAMis a promising candidate that could address these issues.Unfortunately, the filament formation and dissolution mechanism remainspoorly known.However, a more detailed understanding of these processes is essentialto increase the filament stability and the reliabilityof CBRAM as a device.Thus, investigations on an atomic level by the usage ofcomputer-aided design (TCAD) toolsarerequired.
Status: Available
- Looking for 1 semester student
- Interested candidates please contact: Jan Aeschlimann
Prerequisites
We are seeking for a candidate with a general interest in molecular modelling techniques(no former experience required). Basic knowledge in MATLABis advantageous.
Character
20% theory, 10% model development, 70% simulation and analysis.
