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Investigation of the source starvation effect in III-V MOSFET

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Investigation of the source starvation effect.png

Short Description

To overcome the saturation of the electron velocity in next generation metal-oxide-semiconductor field-effect transistors (MOSFETs), Silicon, the material of reference in the transistor industry, could be replaced by III-V semiconductors. InGaAs, for example, offers better electron transport properties than Si, but the number of available carriers that can rapidly flow through a transistor structure is limited due to the very low density-of-states of III-V semiconductors. As a consequence, the source contact of III-V MOSFETs might not be able to provide enough electrons at the time, thus leading to a reduction of the drive current instead of an increase. This phenomena is known as source starvation effect. The goal of this project is to develop a rate-equation model capable of capturing the distribution of the electron population in the source contact of III-V MOSFETs and of determining whether or not source starvation plays a significant role.

Status: Available

Looking for 1 Semester/Master student
Contact: Mathieu Luisier

Prerequisites

Interest in device modeling

Character

30% Theory
40% Model Implementation
30% Simulations

Professor

Mathieu Luisier

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