Category:Nano-TCAD
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Contents
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Nano-Device Physics (Prof. A. Schenk)
Research in the Nano-Device Physics Group is concerned with nanoelectronic devices and technologies, first-principle modeling of carrier transport, the advancement of transport solvers both for quantum structures and scattering-dominated devices, and the development of new numerical techniques. For technical and economical reasons modeling and optimization by numerical simulations based on semiconductor physics (Technology Computer Aided Design - TCAD) complete or replace experimental development techniques. The TCAD concept is a scientific challenge as well as a technical methodology, therefore it requires research collaborations between academia and industry. Our TCAD activities comprise the study and modeling of physical phenomena in current and future CMOS technologies as well as in post-CMOS and emerging research devices.
Computational Nanoelectronics (Prof. M. Luisier)
The Computational Nanoelectronics group was established in 2011. It develops and applies numerical algorithms to investigate nanodevices ranging from next generation transistors to thermoelectric generators and optoelectronic devices. While theories based on classical physics have been very successful in helping experimentalists design microelectronic devices, new approaches based on quantum mechanics are required to accurately model today nanoscale transistors and solar cells and to predict their characteristics even before they are fabricated. As simulation tool, we use OMEN, a state-of-the-art, massively parallel, quantum transport solver. OMEN was the first full-band, atomistic, and multi-dimensional device simulator capable of treating realistically extended nanostructures. It has been tested up to 220'000 cores on some of the largest available supercomputers, reaching a sustained performance of more than 1 Petaflop/s, while investigating nanowire, ultra-thin-body, graphene nanoribbon, carbon nanotube field-effect and band-to-band tunneling transistors. By further extending the physical models of OMEN and by applying them to novel structures, we expect to discover new phenomena governing the behavior of nanoelectronic devices and bring new insight into their physics.
Available Projects
We are still looking for students/partners to work on the following projects
- Efficient Banded Matrix Multiplication for Quantum Transport Simulations
- Charge and heat transport through graphene nanoribbon based devices
- Molecular Binding Kinetics Modelling of NO2 on Graphene/hBN Heterostructure
- Quantum Transport Modeling of Interband Cascade Lasers (ICL)
- Every individual on the planet should have a real chance to obtain personalized medical therapy
- Unconventional phase change memory device concepts for in-memory and neuromorphic computin
- Integrated silicon photonic structures-Lumiphase
- Ferroelectric Memristors for Artificial Neural Networks (IBM-Zurich)
- Characterization techniques for silicon photonics-Lumiphase
- Implementation of Computationally Efficient Scattering Mechanisms for Periodic Devices and 2D Materials
- Electrothermal characterization of van der Waals Heterostructures with a partial overlap
- Phase-change memory devices for emerging computing paradigms
- Finite element modeling of electrochemical random access memory
- Influence of the Initial Filament Geometry on the Forming Step in CBRAM.
- Nanoscale Hybrid III-V Plasmonic Laser for Low-Power Photonic ICs
- Design space exploration of InP Heterojunction Bipolar Transistors (DHBTs)
- Quantum transport in 2D heterostructures
- Development of an efficient algorithm for quantum transport codes
- Investigation of Metal Diffusion in Oxides for CBRAM Applications
- Investigation of Redox Processes in CBRAM
Links
Pages in category "Nano-TCAD"
The following 20 pages are in this category, out of 20 total.
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- Implementation of Computationally Efficient Scattering Mechanisms for Periodic Devices and 2D Materials
- Influence of the Initial Filament Geometry on the Forming Step in CBRAM.
- Integrated silicon photonic structures-Lumiphase
- Investigation of Metal Diffusion in Oxides for CBRAM Applications
- Investigation of Redox Processes in CBRAM