Difference between revisions of "Quantum transport in 2D heterostructures"
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Revision as of 16:48, 7 July 2016
Contents
Short Description
Mono-layer, so-called two-dimensional (2D), materials with a tunnelable band gap, e.g. phosphorene, are becoming very promising for potentially device applications. Tunnel field-effect transistors (TFETs) are expected to give rise to a new generation of low-power consumption logic switches. To date, TFETs are being investigated and built from conventional semiconductors, less often from 2D materials. Your task is from first-principles to characterize/study 2D-material-based TFETs, e.g. hetero-bilayer TFETs. The 2D Materials can be defined starting the project according to the student interest.
Status: Available
- Looking for 1 Master student in Electrical Engineering, Physics, Computer Science or related fields
- Contact: Hamilton Carrillo-Nunez
Prerequisites
- Experience with Ab-initio tools (VASP, QUANTUMESPRESSO), but not required
Character
- 40% Theory
- 40% Simulations
- 20% Implementation
Professor
Detailed Task Description
Project Overview
Goals
Practical Details
Results
Links
- Efficient Banded Matrix Multiplication for Quantum Transport Simulations
- Charge and heat transport through graphene nanoribbon based devices
- Molecular Binding Kinetics Modelling of NO2 on Graphene/hBN Heterostructure
- Quantum Transport Modeling of Interband Cascade Lasers (ICL)
- Every individual on the planet should have a real chance to obtain personalized medical therapy
- Unconventional phase change memory device concepts for in-memory and neuromorphic computin
- Integrated silicon photonic structures-Lumiphase
- Ferroelectric Memristors for Artificial Neural Networks (IBM-Zurich)
- Characterization techniques for silicon photonics-Lumiphase
- Implementation of Computationally Efficient Scattering Mechanisms for Periodic Devices and 2D Materials
- Electrothermal characterization of van der Waals Heterostructures with a partial overlap
- Phase-change memory devices for emerging computing paradigms
- Finite element modeling of electrochemical random access memory
- Influence of the Initial Filament Geometry on the Forming Step in CBRAM.
- Nanoscale Hybrid III-V Plasmonic Laser for Low-Power Photonic ICs
- Design space exploration of InP Heterojunction Bipolar Transistors (DHBTs)
- Quantum transport in 2D heterostructures
- Development of an efficient algorithm for quantum transport codes
- Investigation of Metal Diffusion in Oxides for CBRAM Applications
- Investigation of Redox Processes in CBRAM