Difference between revisions of "LTE-Advanced RF Front-end Design in 28nm CMOS Technology"
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promising will be implemented and verifed in the mentioned IC technology. | promising will be implemented and verifed in the mentioned IC technology. | ||
− | ===Status: | + | ===Status: Completed === |
: Looking for 1-2 Semester/Master students | : Looking for 1-2 Semester/Master students | ||
: Contact: [[:User:burgert | Thomas Burger]] | : Contact: [[:User:burgert | Thomas Burger]] | ||
+ | |||
===Prerequisites=== | ===Prerequisites=== | ||
: Analog Integrated Circuits | : Analog Integrated Circuits |
Revision as of 15:40, 20 December 2017
Contents
Short Description
In a transceiver IC, the analog front-end is the first circuit that processes the received signal from the antenna. In modern transceiver ICs (e.g. for LTE application) the front-end amplifies the signal prior to a direct downconversion to baseband. Both the amplification and frequency conversion stage have to show a very low noise figure and have to be free of harmonic distortion. As more and more digital functions are integrated on the transceiver IC, ultra-scaled digital CMOS starts offering big advantages in terms of area and power consumption. Those technologies pose new challenges and offer new opportunities to the analog front-end design. In this work the analog front-end for the up-coming 5G standards will be implemented in a 28nm CMOS technology. Different topologies for the low-noise-amplifier (LNA) and the mixer (frequency translation circuit) shall be analyzed and compared. The most promising will be implemented and verifed in the mentioned IC technology.
Status: Completed
- Looking for 1-2 Semester/Master students
- Contact: Thomas Burger
Prerequisites
- Analog Integrated Circuits
- Communication Electronics (recommended)
Character
- 30% Theory
- 60% ASIC Design
- 10% Layout