Difference between revisions of "Influence of the Initial Filament Geometry on the Forming Step in CBRAM."
(→The Big Picture)
|Line 12:||Line 12:|
Latest revision as of 11:53, 4 September 2019
Conductive bridging RAM (CBRAM)is operated via the formation and disruption of a metallic filament between two metal electrodes. The presence or absence of such a bridging filament results in a low (ON) or high (OFF) resistance state, respectively. The filament formation/disruption is controlled by applying an external voltage. In this project, you will focus on the so-called forming step, the initial formation of a metallic filament in an “unused” device. Starting from different electrodes with pre-definedfilament geometries (e.g. cone-shaped, see figure), you will evaluate their influence on the switching dynamics. The simulations will be performed by LAMMPS, a molecular dynamics simulator using force fields, and the resulting trajectories will be analyzed by your own Matlab scripts.
The Big Picture
Well-established memory technologies such as Flash and dynamic RAM (DRAM) have nearly reached their scaling limits in integration density while being limited in operating speed. Furthermore, more energy-efficient memory storage options could reduce its operating costs. CBRAMis a promising candidate that could address these issues.Unfortunately, the filament formation and dissolution mechanism remains poorly known.However, a more detailed understanding of these processes is essentialto increase the filament stability and the reliability of CBRAM as a device.Thus, investigations on an atomic level by the usage of computer-aided design (TCAD) tools are required.
- Looking for 1 semester student
- Interested candidates please contact: Jan Aeschlimann
We are seeking for a candidate with a general interest in molecular modelling techniques(no former experience required). Basic knowledge in MATLAB is advantageous.
20% theory, 10% model development, 70% simulation and analysis.